Method of separating semiconductor dies from a waf

专利名称：Method of separating semiconductor dies

from a wafer

发明人：Kurt P. Wachtler申请号：US09917534申请日：20010727公开号：US06686225B2公开日：20040203

专利附图：

摘要：Methods are disclosed for manufacturing semiconductor device dies and forseparating dies from a semiconductor wafer, wherein one or more channels are etched inthe top of the wafer between individual die areas. Material is then removed from the

bottom side of the wafer in order to separate the individual dies. Methods are alsodisclosed for removing material from the bottom side of the wafer dies, wherein acontoured surface is provided on the die bottom, such as through an etching process. Inaddition, methods are disclosed for removing material from the bottom side of a wafer,and for securing a semiconductor device to a surface. Semiconductor wafers and dies arealso disclosed having contoured bottom surfaces.

申请人：TEXAS INSTRUMENTS INCORPORATED

代理人：W. Daniel Swayze, Jr.,W. James Brady,Frederick J. Telecky, Jr.

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