Method of separating semiconductor wafer with diel

专利名称：Method of separating semiconductor wafer

with dielectrics

发明人：Yoshiyuki Sakai申请号：US08/455173申请日：19950531公开号：US05576241A公开日：19961119

摘要：A method for separating a joined substrate type wafer, which wafer is

composed of a pair of semiconductor substrates joined through an insulation film, utilizesdielectrics through simple processing steps. Trenches for separating a semiconductorsubstrate with dielectrics are dug from the surface of the substrate and a dielectrics filmis deposited on the surface of the substrate including the trenches. Then poly- crystallinesilicon under layer is grown by CVD method to a thickness of about 0.5 &mgr;m.

Thereafter, a poly-crystalline silicon filler layer, which is deep enough to fill the trenches,is grown over the underlying poly-crystalline silicon under layer, followed by selectivelyremoving the two poly-crystalline silicon layers from the surface of the substrateexcluding the regions inside the trenches. An alternative embodiment contemplatesdepositing a second dielectrics film interposed between the poly-crystalline silicon underlayer and the poly-crystalline silicon filler layer. The overall process substantiallyincreases the insulation between the various semiconductor regions while increasing thesmoothness of the dielectrics film by controlling the grain size of the poly- crystallinesilicon matrix.

申请人：FUJI ELECTRIC CO., LTD.

代理机构：Morrison Law Firm

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