WAFER-LEVEL DIE ATTACH METALLIZATION

专利名称：WAFER-LEVEL DIE ATTACH METALLIZATION发明人：Fabian Radulescu,Helmut Hagleitner,Terry

Alcorn,William T. Pulz

申请号：US14591566申请日：20150107

公开号：US20150140806A1公开日：20150521

专利附图：

摘要：Embodiments of a semiconductor wafer having wafer-level die attach

metallization on a back-side of the semiconductor wafer, resulting semiconductor dies,and methods of manufacturing the same are disclosed. In one embodiment, a

semiconductor wafer includes a semiconductor structure and a front-side metallizationthat includes front-side metallization elements for a number of semiconductor die areas.The semiconductor wafer also includes vias that extend from a back-side of thesemiconductor structure to the front-side metallization elements. A back-side

metallization is on the back-side of the semiconductor structure and within the vias. Foreach via, one or more barrier layers are on a portion of the back-side metallization that iswithin the via and around a periphery of the via. The semiconductor wafer further includeswafer-level die attach metallization on the back-side metallization other than the

portions of the back-side metallization that are within the vias and around the peripheriesof the vias.

申请人：Cree, Inc.

地址：Durham NC US

国籍：US

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