专利名称：Methods of forming pluralities of capacitors发明人：Gurtej S. Sandhu,H. Montgomery
Manning,Stephen J. Kramer
申请号：US11196593申请日：20050802公开号：US07199005B2公开日：20070403
专利附图：
摘要：The invention comprises methods of forming pluralities of capacitors. In oneimplementation, metal is formed over individual capacitor storage node locations on asubstrate. A patterned masking layer is formed over the metal. The patterned masking
layer comprises openings therethrough to an outer surface of the metal. Individual of theopenings are received over individual of the capacitor storage node locations. A pit isformed in the metal outer surface within individual of the openings. After forming thepits, the metal is anodically oxidized through the openings effective to form a singlemetal oxide-lined channel in individual of the openings over the individual capacitorstorage nodes. Individual capacitor electrodes are formed within the channels inelectrical connection with the individual capacitor storage node locations. At least someof the metal oxide is removed from the substrate, and the individual capacitor electrodesare incorporated into a plurality of capacitors. Other aspects and implementations arecontemplated.
申请人：Gurtej S. Sandhu,H. Montgomery Manning,Stephen J. Kramer
地址：Boise ID US,Eagle ID US,Boise ID US
国籍：US,US,US
代理机构：Wells St. John P.S.
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