MRAM cells and circuit for programming the same

专利名称：MRAM cells and circuit for programming the

same

发明人：Shine Chung,Hung-Sen Wang,Tao-Wen

Chung,Chun-Jung Lin,Yu-Jen Wang

申请号：US13364955申请日：20120202公开号：US08451655B2公开日：20130528

专利附图：

摘要：A circuit includes magneto-resistive random access memory (MRAM) cell and acontrol circuit. The control circuit is electrically coupled to the MRAM cell, and includes a

current source configured to provide a first writing pulse to write a value into the MRAMcell, and a read circuit configured to measure a status of the MRAM cell. The controlcircuit is further configured to verify whether a successful writing is achieved through thefirst writing pulse.

申请人：Shine Chung,Hung-Sen Wang,Tao-Wen Chung,Chun-Jung Lin,Yu-Jen Wang

地址：San Jose CA US,Tainan TW,Zhubei TW,Hsin-Chu TW,Hsin-Chu TW

国籍：US,TW,TW,TW,TW

代理机构：Slater & Matsil, L.L.P.

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