专利名称：Methods of Forming Pluralities of
Capacitors
发明人：Gurtej S. Sandhu,D. Mark Durcan申请号：US12430621申请日：20090427
公开号：US20090209080A1公开日：20090820
专利附图：
摘要：The invention includes methods of forming pluralities of capacitors. In oneimplementation, a method of forming a plurality of capacitors includes providing aplurality of capacitor electrodes within a capacitor array area over a substrate. The
capacitor electrodes comprise outer lateral sidewalls. The plurality of capacitorelectrodes is supported at least in part with a retaining structure which engages theouter lateral sidewalls. The retaining structure is formed at least in part by etching alayer of material which is not masked anywhere within the capacitor array area to formsaid retaining structure. The plurality of capacitor electrodes is incorporated into aplurality of capacitors. Other aspects and implementations are contemplated.
申请人：Gurtej S. Sandhu,D. Mark Durcan
地址：Boise ID US,Boise ID US
国籍：US,US
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