Si9945DY

Si9945DYDual N-Channel Enhancement-Mode MOSFETProduct SummaryVDS (V)60rDS(on) (W)0.10 @ VGS = 10 V0.20 @ VGS = 4.5 VID (A)\"3.3\"2.5D1D1D2D2SO-8S1G1S2G21234Top View8765D1D1D2D2G1G2S1N-Channel MOSFETS2N-Channel MOSFETAbsolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)ParameterDrain-Source VoltageGate-Source VoltageContinuousDrainCurrent (TJContinuous Drain CurrentPulsed Drain CurrentContinuous Source Current (Diode Conduction)aMaximum Power DissipationMaximumPowerDissipationaOperating Junction and Storage Temperature RangeTA = 25_CTA = 70_C = 150=150_C)aTA = 25_CTA = 70_CSymbolVDSVGSIDIDMISPDTJ, TstgLimit60\"20\"3.3\"2.6101.72.01.3–55 to 150UnitVAW_CThermal Resistance RatingsParameterMaximum Junction-to-AmbientaNotesa.Surface Mounted on FR4 Board, t v 10 sec.Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70133.A SPICE Model data sheet is available for this product (FaxBack document #70516).SymbolRthJALimit62.5Unit_C/WSiliconixS-47958—Rev. G, 15-Apr-961Si9945DYSpecifications (TJ = 25_C Unless Otherwise Noted) ParameterStatic Gate Threshold VoltageGate-Body LeakageZeroGateVoltage Drain CurrentZero Gate VoltageDrainCurrentOn-State Drain CurrentbDrain-Source On-State ResistanceDrain-SourceOn-StateResistancebForward TransconductancebDiode Forward VoltagebVGS(th)IGSSIDSSID(on)rDS(on)gfsVSDVDS = VGS, ID = 250 mAVDS = 0 V, VGS = \"20 VVDS = 48 V, VGS = 0 VVDS = 48 V, VGS = 0 V, TJ = 55_CVDS w 5 V, VGS = 10 VVGS = 10 V, ID = 3.3 AVGS = 4.5 V, ID = 2.5 AVDS = 15 V, ID = 3.3 AIS = 1.7 A, VGS = 0 V7.00.81.2100.100.201.0\"100125VnAmAAWSVSymbolTest ConditionMinTypaMaxUnitDynamica Total Gate ChargeGate-Source ChargeGate-Drain ChargeTurn-On Delay TimeRise TimeTurn-Off Delay TimeFall TimeSource-Drain Reverse Recovery TimeQgQgsQgdtd(on)trtd(off)tftrrIF = 1.7 A, di/dt = 100 A/msVDD = 30 V,, RL = 30 WID^ 1 A, VGEN = 10 V, RG = 6 WVDS = 30 V, VGS = 10 V, ID = 3.333 A152.14.591025147025305040100ns30nCNotesa.Guaranteed by design, not subject to production testing.b.Pulse test; pulse width v300 ms, duty cycle v2%.2SiliconixS-47958—Rev. G, 15-Apr-96Si9945DYTypical Characteristics (25_C Unless Otherwise Noted)20Output Characteristics20Transfer CharacteristicsTC = –55_C16ID– Drain Current (A)VGS = 9, 8, 7, 6 VID– Drain Current (A)1625_C125 V812125_C844 V3 V400246810VDS – Drain-to-Source Voltage (V)001234567VGS – Gate-to-Source Voltage (V)0.5On-Resistance vs. Drain Current1000CapacitancerDS(on)– On-Resistance (W)0.4C – Capacitance (pF)8000.3VGS = 4.5 V0.2VGS = 10 V600Ciss4000.1200CrssCoss00246810ID – Drain Current (A)001020304050VDS – Drain-to-Source Voltage (V)10VGS– Gate-to-Source Voltage (V)VDS = 60 VID = 0.4 AGate Charge2.0On-Resistance vs. Junction TemperatureVGS = 10 VID = 3.3 A6rDS(on)– On-Resistance (W)(Normalized)0369121581.61.240.820.40Qg – Total Gate Charge (nC)0–50–250255075100125150TJ – Junction Temperature (_C)SiliconixS-47958—Rev. G, 15-Apr-963Si9945DYTypical Characteristics (25_C Unless Otherwise Noted)Source-Drain Diode Forward Voltage0.300.25rDS(on)– On-Resistance (W)IS– Source Current (A)10TJ = 150_CTJ = 25_C0.200.15ID = 3.3 A0.100.05000.40.81.21.62.00246810VSD – Source-to-Drain Voltage (V)1.0VGS – Gate-to-Source Voltage (V)200On-Resistance vs. Gate-to-Source Voltage1Threshold VoltageSingle Pulse Power0.5VGS(th)Variance (V)Power (W)100125150ID = 250 mA0.016012080–0.5400–2502550750.0010.0100.100Time (sec)1.010TJ – Temperature (_C)21–1.0–50Normalized Thermal Transient Impedance, Junction-to-AmbientNormalized Effective TransientThermal ImpedanceDuty Cycle = 0.50.2Notes:0.10.10.050.02Single Pulse10–410–310–210–11PDMt1t21. Duty Cycle, D =t1t22. Per Unit Base = RthJA = 62.5_C/W3. TJM – TA = PDMZthJA(t)4. Surface Mounted1030Square Wave Pulse Duration (sec)4SiliconixS-47958—Rev. G, 15-Apr-96