Advanced Power MOSFETFEATURES!Avalanche Rugged Technology!Rugged Gate Oxide Technology !Lower Input Capacitance!Improved Gate Charge!Extended Safe Operating Area!Lower Leakage Current : 10µA(Max.) @ VDS= -200V!Lower RDS(ON) : 2.25 Ω(Typ.)SFM9210BVDSS= -200 VRDS(on) = 3.0 ΩID= -0.5 ASOT-2232131. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbolVDSSIDIDMVGSEASIAREARdv/dtPDTJ , TSTGTLCharacteristicDrain-to-Source VoltageContinuous Drain Current (TA=25C)Continuous Drain Current (TA=70C)Drain Current-PulsedGate-to-Source VoltageSingle Pulsed Avalanche EnergyAvalanche CurrentRepetitive Avalanche EnergyPeak Diode Recoverydv/dtoTotal Power Dissipation (TA=25C)*LinearDerating Factor*2O1O1O3OooValue-200-0.5-0.31OUnitsVAAVmJAmJV/nsWW/Co-4.0+ _30133-0.50.16-5.01.630.013-55 to +150Operating Junction andStorage Temperature RangeMaximum Lead Temp. for SolderingPurposes, 1/8”from case for 5-secondsoC300Thermal ResistanceSymbolRθJACharacteristicJunction-to-Ambient*Typ.--Max.77UnitsoC/W*When mounted on the minimum pad size recommended (PCB Mount).Rev. A元器件交易网www.cecb2b.com
SFM9210Electrical Characteristics (TC=25oC unless otherwise specified)SymbolBVDSS∆BV/∆TJVGS(th)IGSSIDSSRDS(on)gfsCissCossCrsstd(on)trtd(off)tfQgQgsQgdCharacteristicDrain-Source Breakdown VoltageBreakdown Voltage Temp.Coeff.Gate Threshold VoltageGate-Source Leakage , ForwardGate-Source Leakage , ReverseDrain-to-Source Leakage CurrentStatic Drain-SourceOn-State ResistanceForwardTransconductanceInput CapacitanceOutput CapacitanceReverse Transfer CapacitanceTurn-On Delay TimeRise TimeTurn-Off Delay TimeFall TimeTotal Gate ChargeGate-Source ChargeGate-Drain(“Miller “) ChargeMin.Typ.Max.Units-200---2.0-----------------------------------0.2------------0.622045161020271291.84.8-----4.0-100100-10-1003.0--28565253050653511----nCnspFVVnAP-CHANNELPOWER MOSFETTest ConditionVGS=0V,ID=-250µA VDS=-5V,ID=-250µAVGS=-30VVGS=30VVDS=-200VVDS=-160V,TC=125C 4VGS=-10V,ID=-0.25A OooV/CID=-250µA See Fig 7µAΩSVDS=-40V,ID=-0.25A4OVGS=0V,VDS=-25V,f =1MHzSee Fig 5VDD=-100V,ID=-1.75A,RG=18Ω4OSee Fig 13 O5VDS=-160V,VGS=-10V,ID=-1.75A4O5See Fig 6 & Fig 12 OSource-Drain Diode Ratings and CharacteristicsSymbolISISMVSDtrrQrrCharacteristicContinuous Source CurrentPulsed-Source Current O14Diode Forward Voltage OMin.Typ.Max.Units----------------1100.42-0.5-4.0-4.0----AVnsµCTest ConditionIntegral reversepn-diodein the MOSFETTJ=25C,IS=-0.5A,VGS=0VTJ=25C,IF=-1.75AdiF/dt=100A/µs 4OooReverse Recovery TimeReverse Recovery Charge Notes ;1Repetitive Rating : Pulse Width Limited by Maximum Junction TemperatureO2L=70mH, I=-0.5A, V=-50V, R=27Ω*, Starting T=25oCOASDDGJ o3___<< SFM9210Fig 7. Breakdown Voltage vs. Temperature1.23.02.52.01.51.00.50.0-75P-CHANNELPOWER MOSFETFig 8. On-Resistance vs. Temperature-BVDSS , (Normalized)Drain-Source Breakdown Voltage1.00.9@ Notes : 1. V= 0 VGS = -250 2. IµAD -50-250255075100oRDS(on) , (Normalized)1.1Drain-Source On-Resistance@ Notes : 1. V = -10 VGS = -0.9 A 2. ID175-50-250.8-75125150TJ , Junction Temperature [C]TJ , Junction Temperature [oC]0255075100125150175Fig 9. Max. Safe Operating Area -ID , Drain Current [A]Operation in This Area is Limited by R DS(on)Fig 10. Max. Drain Current vs. Case Temperature0.60-ID , Drain Current [A]1100.450100.01 ms0.1 ms1 ms10 ms@ Notes :o 1. T= 25 CC oC= 150 2. TJ 0.30-110DC0.15-210 3. Single Pulse0101102100.00255075100125150-VDS , Drain-Source Voltage [V]Tc , Case Temperature [oC]Fig 11. Thermal ResponseZJC(t) , Thermal Response102D=0.50.21010.10.050.020.0110010-5single pulset1.t2.@ Notes : 1. ZθJC(t)=77 oC/W Max. 2. Duty Factor, D=t1/t2 3. TJM-TC=PDM*ZθJC(t)P.DMθ10-410-310-210-1100101t1 , Square Wave Pulse Duration [sec]元器件交易网www.cecb2b.com P-CHANNELPOWER MOSFETFig 12. Gate Charge Test Circuit & WaveformSFM9210“Current Regulator ”50KΩ12V200nF300nFSame Typeas DUTVDSVGSQg-10VVGSDUT-3mAQgsQgdR1Current Sampling (IG)ResistorR2Current Sampling (ID)ResistorChargeFig 13. Resistive Switching Test Circuit & WaveformsVoutVinRGDUT-10VRLVDD( 0.5 rated VDS )td(on)tontrtd(off)tofftfVin10%Vout90%Fig 14. Unclamped Inductive Switching Test Circuit & WaveformsLLVDSVarytpto obtainrequired peak IDBVDSS12------------------------EAS =LL IAS2BVDSS--VDDt pIDVDDCDUTVDDIASID (t)TimeVDS (t)RG-10VtpBVDSS元器件交易网www.cecb2b.com SFM9210Fig 15. Peak Diode Recoverydv/dtTest Circuit & WaveformsP-CHANNELPOWER MOSFET+VDSDUT--ISLVGSRGVGSDriverCompliment of DUT(N-Channel)VDD•dv/dtcontrolled by “RG”•IScontrolled by Duty Factor “D”VGS( Driver )Gate Pulse WidthD =--------------------------Gate Pulse Period10VBody Diode Reverse CurrentIS( DUT )IRMdi/dtIFM, Body Diode Forward CurrentVfVDS( DUT )Body DiodeForward Voltage DropBody Diode Recoverydv/dtVDD元器件交易网www.cecb2b.com TRADEMARKSThe following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and isnot intended to be an exhaustive list of all such trademarks.ACEx™Bottomless™CoolFET™CROSSVOLT™DOME™EcoSPARK™E2CMOSTMEnSignaTMFACT™FACT Quiet Series™FAST®DISCLAIMERFASTr™FRFET™GlobalOptoisolator™GTO™HiSeC™I2C™ISOPLANAR™LittleFET™MicroFET™MicroPak™MICROWIRE™OPTOLOGIC®OPTOPLANAR™PACMAN™POP™Power247™PowerTrench®QFET™QS™QT Optoelectronics™Quiet Series™SILENT SWITCHER®SMART START™SPM™Stealth™SuperSOT™-3SuperSOT™-6SuperSOT™-8SyncFET™TinyLogic™TruTranslation™UHC™UltraFET®VCX™FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHERNOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 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